Koh, Minghao and Ellis, Grant and Teoh, Chin Soon (2010) Effects of Output Low Impedance Termination to Linearity of GaAs HBT Power Amplifier. In: The 3rd International Conference on Intelligent & Advanced Systems 2010 (ICIAS2010), 15-17 June 2010, Kuala Lumpur Convention Centre.
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Abstract
Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (2 – 1) to the output of a gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) distributed amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 2.5 GHz to 3 GHz by 1.6 to 3.4 dB. The low impedance termination is easily implemented using an external series inductor-capacitor network (LC trap) to the Monolithic Microwave Integrated Circuit (MMIC) DA. The addition of the trap causes no reduction to the in-band gain, return loss, and P1dB.
Item Type: | Conference or Workshop Item (Paper) |
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Depositing User: | Dr. Grant A. Ellis |
Date Deposited: | 18 Mar 2011 09:05 |
Last Modified: | 19 Jan 2017 08:23 |
URI: | http://scholars.utp.edu.my/id/eprint/4754 |