Ishihara, Tatsumi and Matsuda, Hideaki and Bustam, Mohamad Azmi and Takita, Yusaku (1996) Oxide ion conductivity in doped Ga based perovskite type oxide. Solid State Ionics , 86-88. pp. 197-201.
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Abstract
Oxide ion conductivity of Ga based perovskite type oxides, LnGaO, (Ln = Nd, La) and its related oxide, A,Ga,O,
(A = Ba and St) was investigated. Oxide ion transference number is almost I.0 on Sr,Ga,O, or Ba,Ga,O,. However,
electrical conductivity of these A,Ga,O, system oxides was lower than log (a/S cm-‘) = - 3 due to the low solubility of
the aliovalent cations. On the other hand, doped perovskite type oxide of NdGaO, and LaGaO; exhibited a high electrical
conductivity and the transference number of oxide ion was higher than 0.9 in the oxygen partial pressure range from PO2 = 1 to 1o-2’ atm. In particular, Ca and Mg doped NdGaO, exhibited a high oxide ion conductivity in similar with LaGaO,based oxide.
Item Type: | Article |
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Subjects: | T Technology > T Technology (General) |
Departments / MOR / COE: | Departments > Chemical Engineering |
Depositing User: | Assoc Prof Dr Mohamad Azmi Bustam @ Khalil |
Date Deposited: | 04 Jan 2011 00:36 |
Last Modified: | 20 Mar 2017 01:57 |
URI: | http://scholars.utp.edu.my/id/eprint/3799 |