A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist

Gibbons, Francis and Mohd Zaid, Hasnah and Robinson, A.P.G. (2007) A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist. Small, 3 (12). pp. 2076-2080.

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Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.

Item Type:Article
Subjects:Q Science > QC Physics
Departments / MOR / COE:Departments > Fundamental & Applied Sciences
ID Code:886
Deposited By: Dr Hasnah Mohd Zaid
Deposited On:25 Mar 2010 02:00
Last Modified:19 Jan 2017 08:26

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