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A CMOS MEMS Resonant Magnetic field Sensor with differential Electrostatic actuation and Capacitive sensing

Ahmad, Farooq and Dennis, John Ojur and Md Khir, Mohd Haris and Hamid, Nor Hisham (2012) A CMOS MEMS Resonant Magnetic field Sensor with differential Electrostatic actuation and Capacitive sensing. Advanced Materials Research, 403-40 . pp. 4205-4209. ISSN 1662-8985

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Abstract

This paper is about CMOS MEMS resonant magnetic field sensor in which differential electrostatic actuation, capacitive sensing, resonant frequency, quality factor and sensitivity of interdigitated comb resonator is investigated. Information is embedded in the output signal frequency because it is robust against the interference from other sources during transmission. At damping ratio of 0.0001, resonant frequency of the comb resonator is 4.35 kHz with quality factor 5000 and amplitude 18.45 μm. Sensitivity of the device towards external magnetic field is 9.455 mHz/nT which is 10,000 times improved than recently published data.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Academic Subject One:Academic Department - Electrical And Electronics - Pervasisve Systems - Microelectronics - MEMS
Departments / MOR / COE:Mission Oriented Research > Nanotechnology
ID Code:8784
Deposited By: Dr John Ojur Dennis
Deposited On:16 Jan 2013 02:07
Last Modified:16 Jan 2013 02:07

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