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A CMOS MEMS Resonant Magnetic field Sensor with differential Electrostatic actuation and Capacitive sensing

Ahmad, Farooq and Dennis, John Ojur and Md Khir, Mohd Haris and Hamid, Nor Hisham (2011) A CMOS MEMS Resonant Magnetic field Sensor with differential Electrostatic actuation and Capacitive sensing. In: ICMENS 2011, 4 - 6 November 2011, Kuala Lumpur, Malaysia. (Submitted)

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Abstract

This paper is about CMOS MEMS resonant magnetic field sensor in which differential electrostatic actuation, capacitive sensing, resonant frequency, quality factor and sensitivity of interdigitated comb resonator is investigated. Information is embedded in the output signal frequency because it is robust against the interference from other sources during transmission. At damping ratio of 0.0001, resonant frequency of the comb resonator is 4.35 kHz with quality factor 5000 and amplitude 18.45 μm. Sensitivity of the device towards external magnetic field is 9.455 mHz/nT which is 10,000 times improved than recently published data.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Fundamental & Applied Sciences
ID Code:6970
Deposited By: Dr John Ojur Dennis
Deposited On:05 Dec 2011 03:01
Last Modified:19 Jan 2017 08:22

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