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The Analysis of Parameter Limitation in Diode-Clamped Resonant Gate Drive Circuit

Yahaya, Nor Zaihar and awan, mohammad and Begam , Mumtaj (2010) The Analysis of Parameter Limitation in Diode-Clamped Resonant Gate Drive Circuit. [Citation Index Journal]

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Abstract

Switching loss has to be reduced in order to improve converter’s performance and efficiency. In high switching frequency, the effect of the loss is much greater. The duty ratio, dead time and inductor value are the limiting parameters which bring implications on the switching loss and hence total gate drive loss. Using PSpice circuit simulator, the optimization of these parameters have been carried out and it is found that the duty ratio, dead time and resonant inductor value are 20 %, 15 ns and 9 nH respectively. The details for choosing these values are presented in this paper.

Item Type:Citation Index Journal
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:6717
Deposited By: Dr Nor Zaihar Yahaya
Deposited On:21 Nov 2011 06:29
Last Modified:19 Jan 2017 08:24

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