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Simulation and Analysis of Si Schottky Diode Family in DC-DC Converter

Yahaya, Nor Zaihar and ramle, fairuz hanisah (2010) Simulation and Analysis of Si Schottky Diode Family in DC-DC Converter. [Citation Index Journal]

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Abstract

The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the FET in the DC-DC converter. Two inductive load chopper circuits are simulated with different test diodes using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for both converter circuits. The results have shown that the SiC diode has higher energy savings of more than 73.13 % in turn-off switching losses. This eventually corresponds to the reduction of 96.16 % in FET turn-on peak power dissipation of SiC converter. However, there is a minor drawback in drain voltage overshoot of the converter. Some detailed analyses are presented in the paper.

Item Type:Citation Index Journal
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:6716
Deposited By: Dr Nor Zaihar Yahaya
Deposited On:21 Nov 2011 06:29
Last Modified:19 Jan 2017 08:24

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