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Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor

Burhanudin, Zainal Arif and Nuryadi, Ratno and Tabe, Michiharu (2007) Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor. Applied Physics Letters, 91 (4). pp. 1-3. ISSN 00036951

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Official URL: http://apl.aip.org/resource/1/applab/v91/i4/p04210...

Abstract

The authors have detected the ionization of single-acceptors in the underlying p on p+ substrate of a silicon-on-insulator (SOI) wafer using a single-hole-tunneling (SHT) transistor fabricated in the top Si layer of the SOI at low temperatures. It was found that freeze-out boron atoms in the substrate are sequentially ionized from near the buried Si O2 p-Si substrate interface to deeper positions by application of a vertical electric field, creating steplike features in the time-dependent SHT current. © 2007 American Institute of Physics.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:5376
Deposited By: Dr Zainal Arif Burhanudin
Deposited On:14 Apr 2011 12:56
Last Modified:14 Apr 2011 12:56

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