Burhanudin, Zainal Arif and Nuryadi, Ratno and Tabe, Michiharu (2007) Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor. Applied Physics Letters, 91 (4). pp. 1-3. ISSN 00036951
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Official URL: http://apl.aip.org/resource/1/applab/v91/i4/p04210...
Abstract
The authors have detected the ionization of single-acceptors in the underlying p on p+ substrate of a silicon-on-insulator (SOI) wafer using a single-hole-tunneling (SHT) transistor fabricated in the top Si layer of the SOI at low temperatures. It was found that freeze-out boron atoms in the substrate are sequentially ionized from near the buried Si O2 p-Si substrate interface to deeper positions by application of a vertical electric field, creating steplike features in the time-dependent SHT current. © 2007 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| ID Code: | 5376 |
| Deposited By: | Dr Zainal Arif Burhanudin |
| Deposited On: | 14 Apr 2011 12:56 |
| Last Modified: | 14 Apr 2011 12:56 |
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