Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver

In megahertz switching frequency, the effect of
loss is significant. In diode-clamped resonant gate driver circuit,
the resonant inductor current, duty ratio and dead time are the
limiting parameters which bring implications to the switching
loss and hence total gate drive loss. The experimental analysis
has been carried out to validate the simulation results. From the
predetermined inductor current of 9 nH, duty ratio of 20 % and
dead time of 15 ns, remarkably, the experimental results show
less than 10 % difference in value compared to the simulation.
Therefore, this new finding validates that by using correct
choice of these values, the diode-clamped resonant gate driver
can operate better in higher switching frequency.