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Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver

Yahaya, Nor Zaihar and Begam , Mumtaj and awan, mohammad (2010) Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver. In: International Journal of Engineering and Technology. IACSIT, Singapore, pp. 418-422.

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Abstract

In megahertz switching frequency, the effect of loss is significant. In diode-clamped resonant gate driver circuit, the resonant inductor current, duty ratio and dead time are the limiting parameters which bring implications to the switching loss and hence total gate drive loss. The experimental analysis has been carried out to validate the simulation results. From the predetermined inductor current of 9 nH, duty ratio of 20 % and dead time of 15 ns, remarkably, the experimental results show less than 10 % difference in value compared to the simulation. Therefore, this new finding validates that by using correct choice of these values, the diode-clamped resonant gate driver can operate better in higher switching frequency.

Item Type:Book Section
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:4776
Deposited By: Dr Nor Zaihar Yahaya
Deposited On:21 Mar 2011 04:34
Last Modified:19 Jan 2017 08:23

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