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Effects of Output Low Impedance Termination to Linearity of GaAs HBT Power Amplifier

Koh, Minghao and Ellis, Grant and Teoh, Chin Soon (2010) Effects of Output Low Impedance Termination to Linearity of GaAs HBT Power Amplifier. In: The 3rd International Conference on Intelligent & Advanced Systems 2010 (ICIAS2010), 15-17 June 2010, Kuala Lumpur Convention Centre.

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Abstract

Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (2 – 1) to the output of a gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) distributed amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 2.5 GHz to 3 GHz by 1.6 to 3.4 dB. The low impedance termination is easily implemented using an external series inductor-capacitor network (LC trap) to the Monolithic Microwave Integrated Circuit (MMIC) DA. The addition of the trap causes no reduction to the in-band gain, return loss, and P1dB.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:4754
Deposited By: Dr. Grant A. Ellis
Deposited On:18 Mar 2011 09:05
Last Modified:19 Jan 2017 08:23

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