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Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection

Tabe, Michiharu and Nuryadi, Ratno and Moraru, Daniel and Burhanudin, Zainal Arif and Yokoi, K and Ikeda, Hiroya (2008) Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection. Acta Physica Polonica, 113 (3). pp. 811-814.

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Abstract

Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on Si single-electron nano-devices will be presented. We have demonstrated single-electron transfer in random-tunnel-junctions by a cycle of ac gate bias, detection of photons and detection of individual acceptor ions by Si single-hole transistor.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:4501
Deposited By: Dr Zainal Arif Burhanudin
Deposited On:16 Mar 2011 04:17
Last Modified:19 Jan 2017 08:26

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