Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

Tabe, Michiharu and Burhanudin, Zainal Arif and Nuryadi, Ratno and Moraru, Daniel and Ligowski, Maciej and Jablonski, Ryszard and Takeshi, Mizuno (2009) Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons. 2008 MRS Fall Meeting . pp. 1-7.

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We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:4492
Deposited By: Dr Zainal Arif Burhanudin
Deposited On:18 Mar 2011 02:21
Last Modified:19 Jan 2017 08:25

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