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Performance Analysis of Silicon Schottky Diode Family in DC-DC Converter Using Circuit Simulator

Yahaya, Nor Zaihar and ramle, fairuz hanisah (2009) Performance Analysis of Silicon Schottky Diode Family in DC-DC Converter Using Circuit Simulator. IEEE International Conference on Electrical Engineering and Informatics .

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Abstract

The unipolar-based devices, silicon schottky (SiS) and silicon carbide schottky (SiCS) power diodes are investigated for their reverse recovery transient responses and the effects on the turn-on losses of the switching MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are simulated using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for both converter circuits. The results have shown that the SiCS diode has higher energy savings of more than 73.13 % in turn-off switching losses. This eventually leads to the reduction of 96.16 % in MOSFET turn-off peak power dissipation of SiCS converter. However, there is a minor drawback in efficiency of the converter. Some detailed analyses are presented in the paper.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:4394
Deposited By: Dr Nor Zaihar Yahaya
Deposited On:16 Mar 2011 02:42
Last Modified:19 Jan 2017 08:25

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