Design and simulation of a high temperature MEMS microhotplate for application in trace gas detection

N.M., Saad and A.Y., Ahmed and J.O., Dennis and W.A., Talah (2008) Design and simulation of a high temperature MEMS microhotplate for application in trace gas detection. In: 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, 25 November 2008 through 27 November 2008, Johor Bahru, Johor.

[img] PDF
Restricted to Registered users only


Official URL: http://www.scopus.com/inward/record.url?eid=2-s2.0...


In this paper, we present the simulation results of a high temperature MEMS micro-hotplate. The electro-thermomechanical behaviors of micro- hotplates (MHP) have been simulated using CoventorWare. In the simulation, the effects of various thicknesses of the silicon nitride (Si<sub>3</sub>N<sub>4</sub>) membrane layer on the temperature, mechanical deflection and power consumption of the MHP are evaluated. The effect of the addition of a layer of silicon carbide (SiC) on the MHP temperature distribution is also investigated. Results show that as the thickness of the Si<sub>3</sub>N<sub>4</sub> membrane is increased from 0.3 μm to 3 μm, the power consumption of the MHP increases from 7.1mW to 34.3mW while the displacement of the membrane remains constant at a value of about 5.8 μm. It is also demonstrated that when the MHP is designed with a silicon carbide (SiC) heat distributing layer above the silicon oxide (SiO<sub>2</sub>) insulating layer on top of the heater, the uniformity of the temperature on the MHP membrane is considerably improved as compared to a membrane without SiC. ©2008 IEEE.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:CoventorWare; Design and simulation; High temperature MEMS; Insulating layers; Mechanical deflection; Membrane layers; Micro hotplate; Microhotplates; Power Consumption; Simulation result; Thermo-mechanical behaviors; Trace gas detection; Electric power utilization; Membranes; MEMS; Microelectromechanical devices; Silicon carbide; Silicon nitride; Silicon oxides
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:376
Deposited By: Dr Mohamad Naufal Mohamad Saad
Deposited On:09 Mar 2010 01:06
Last Modified:19 Jan 2017 08:26

Repository Staff Only: item control page

Document Downloads

More statistics for this item...