A CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass

Md Khir, Mohd Haris and Qu, Hongwei (2010) A CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass. In: Proceedings of the 2010 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, January 20-23, Xiamen, China.

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This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. Inherent CMOS polysilicon thin film was utilized as piezoresistive material and full Wheatstone bridge was constructed through easy wiring allowed by three metal layers in CMOS thin films. The device fabrication process consists of a standard CMOS process for sensor configuration and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. Bulk single-crystal silicon (SCS)substrate was included in the proof mass to increase sensor sensitivity. With a low operating power of 1.5�mW, the sensitivity was measured as 0.077 mV/g prior to amplification. The sensor was characterized on a magnetic shaker based dynamic test system with a high-end commercial calibrating accelerometer as reference.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:3451
Deposited By: Dr. Mohd Haris Md Khir
Deposited On:23 Dec 2010 03:26
Last Modified:19 Jan 2017 08:24

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