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A CMOS-MEMS Nano-Newton Force Sensor for Biomedical Applications

Md Khir, Mohd Haris and Qu, Hongwei (2010) A CMOS-MEMS Nano-Newton Force Sensor for Biomedical Applications. In: Proceedings of the 2010 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, January 20-23, Xiamen, China.

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Abstract

This paper reports the design and microfabrication of a CMOS-MEMS capacitive force sensor capable of nano-Newton out-of-plane force measurement. Sidewall and fringe capacitance formed by the multiple CMOS metal layers were utilized and fully differential sensing was enabled by common-centroid wiring of the sensing capacitors. Single-crystal silicon (SCS) is incorporated in the entire sensing element for robust structures and reliable sensor deployment in force measurement. A sensitivity of 0.02fF/nN in a measurable force range 2 pN to 1 mN is predicted. The minimum detection force is 2.8 pN. The CMOS-MEMS force sensor features easy post-CMOS microfabrication in which directional SiO2 reactive ion etching (RIE) and silicon deep reactive ion etching (DRIE) are employed.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:3442
Deposited By: Dr. Mohd Haris Md Khir
Deposited On:15 Dec 2010 04:14
Last Modified:19 Jan 2017 08:24

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