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Performance analysis of si schottky diode family in DC-DC converter

N.Z., Yahaya and F.H., Ramle (2009) Performance analysis of si schottky diode family in DC-DC converter. In: 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009, 5 August 2009 through 7 August 2009, Selangor.

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Abstract

The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are simulated using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for both converter circuits. The results have shown that the SiC diode has higher energy savings of more than 73.13 % in turn-off switching losses. This eventually corresponds to the reduction of 96.16 % in MOSFET turn-on peak power dissipation of SiC converter. However, there is a minor drawback in efficiency of the converter. Some detailed analyses are presented in the paper. © 2009 IEEE.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:Converter circuits; Energy saving; Inductive loads; MOS-FET; Parameter setting; Peak power; Performance analysis; Power diode; Pspice software; Reverse recovery; Schottky; Si Schottky diode; SiC diodes; Switching loss; Choppers (circuits); DC-DC converters; Diodes; Electrical engineering; Energy conservation; HVDC power transmission; MOSFET devices; Schottky barrier diodes; Silicon carbide; SPICE; Semiconducting silicon compounds
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:331
Deposited By: Dr Nor Zaihar Yahaya
Deposited On:04 Mar 2010 09:18
Last Modified:19 Jan 2017 08:25

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