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Comparative Study of Switching Energy Losses between Si Pin and SiC Schottky Diodes

Yahaya, Nor Zaihar and Koo, Choon Chew (2004) Comparative Study of Switching Energy Losses between Si Pin and SiC Schottky Diodes. IEEE National Power and Energy Conference . pp. 216-219.

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Abstract

This paper is to compare the switching energy losses of the Silicon Carbide Schottky diode with the Silicon PiN diode. The comparison is done using an Inductive Load Chopper circuit simulated with Pspice, a type of circuit analysis software. Both diode models used for the simulation are from Infineon; the Silicon Carbide Schottky (SDP04S60, 4A/600V) and Silicon PiN (IDP06E60, 6A/600V).

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE:Departments > Electrical & Electronic Engineering
ID Code:2777
Deposited By: Dr Nor Zaihar Yahaya
Deposited On:21 Sep 2010 04:54
Last Modified:19 Jan 2017 08:27

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