Rotated majority gate-based 2n-bit full adder design in quantum-dot cellular automata nanotechnology

Kassa, S. and Gupta, P. and Kumar, M. and Stephan, T. and Kannan, R. (2021) Rotated majority gate-based 2n-bit full adder design in quantum-dot cellular automata nanotechnology. Circuit World .

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Official URL: https://www.scopus.com/inward/record.uri?eid=2-s2....


Purpose: In nano-scale-based very large scale integration technology, quantum-dot cellular automata (QCA) is considered as a strong and capable technology to replace the well-known complementary metal oxide semiconductor technology. In QCA technique, rotated majority gate (RMG) design is not explored greatly, and therefore, its advantages compared to original majority gate are unnoticed. This paper aims to provide a thorough observation at RMG gate with its capability to build robust circuits. Design/methodology/approach: This paper presents a new methodology for structuring reliable 2n-bit full adder (FA) circuit design in QCA utilizing RMG. Mathematical proof is provided for RMG gate structure. A new 1-bit FA circuit design is projected here, which is constructed with RMG gate and clock-zone-based crossover approach in its configuration. Findings: A new structure of a FA is projected in this paper. The proposed design uses only 50 number of QCA cells in its implementation with a latency of 3 clock zones. The proposed 1-bit FA design conception has been checked for its structure robustness by designing various 2, 4, 8, 16, 32 and 64-bit FA designs. The proposed FA designs save power from 46.87 to 25.55 at maximum energy dissipation of circuit level, 39.05 to 23.36 at average energy dissipation of circuit-level and 42.03 to 37.18 at average switching energy dissipation of circuit level. Originality/value: This paper fulfills the gape of focused research for RMG with its detailed mathematical modeling analysis. © 2021, Emerald Publishing Limited.

Item Type:Article
Impact Factor:cited By 0
Uncontrolled Keywords:Adders; Clocks; CMOS integrated circuits; Energy dissipation; Field effect transistors; Integrated circuit manufacture; Metals; MOS devices; Nanocrystals; Oxide semiconductors; Robots; Semiconductor device manufacture; Semiconductor quantum dots, Average energy dissipation; Circuit designs; Circuit levels; Complementary metal-oxide-semiconductor technologies; Design/methodology/approach; Mathematical proof; Quantum-dot cellular automata; Robust circuits, Cellular automata
ID Code:23863
Deposited By: Ms Sharifah Fahimah Saiyed Yeop
Deposited On:19 Aug 2021 13:08
Last Modified:19 Aug 2021 13:08

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