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Carbon nanotube field effect transistor (CNTFET) operational transconductance amplifier (OTA) based design of high frequency memristor emulator

Khurshid, T. and Fatima, S. and Khanday, F.A. and Bashir, F. and Zahoor, F. and Hussin, F.A. (2021) Carbon nanotube field effect transistor (CNTFET) operational transconductance amplifier (OTA) based design of high frequency memristor emulator. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34 (2).

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Abstract

The design and simulation of high frequency memristor emulator using carbon nanotube field effect transistor (CNTFET) based Operational Transconductance Amplifier (OTA) has been presented out in this paper. The proposed memristor emulator design consists of two CNTFET-OTAs and one capacitor with both grounded and floating topologies available for applications. The proposed CNTFET memristor design emulator outperforms the conventional complementary metal oxide semiconductor (CMOS) based memristor emulator topologies. The performance comparison with the reported memristor emulator designs reveals that the proposed grounded and floating memristor design can work over a frequency range of 1 GHz and 10 MHz respectively in comparison to conventional CMOS based design, which works over a maximum range of 8 MHz and 0.4 MHz for grounded and floating memristor designs respectively. The proposed memristor emulator circuit also offers electronic tunability of the memristance which is important for digitally programmable application of memristors. © 2020 John Wiley & Sons Ltd

Item Type:Article
Impact Factor:cited By 0
Uncontrolled Keywords:Carbon nanotubes; CMOS integrated circuits; High frequency amplifiers; Integrated circuit design; Memristors; Metals; MOS devices; Nanosensors; Operational amplifiers; Oxide semiconductors; Topology; Transconductance; Transistors, Carbon nano-tube field effect transistor (CNTFET); Complementary metal oxide semiconductors; Design and simulation; Electronic tunability; Emulator designs; Frequency ranges; High frequency HF; Performance comparison, Carbon nanotube field effect transistors
ID Code:23755
Deposited By: Ms Sharifah Fahimah Saiyed Yeop
Deposited On:19 Aug 2021 10:01
Last Modified:19 Aug 2021 10:01

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