Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes

Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Pandian, M.S. and Ferrer, E.M. and Suresh, K. (2020) Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes. Sensors and Actuators, A: Physical, 313.

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Abstract

In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V.

Item Type: Article
Impact Factor: cited By 2
Uncontrolled Keywords: Acoustic surface wave devices; CMOS integrated circuits; Silica; Silicon; Temperature, Coupling coefficient; Embedded electrodes; Fabricated device; Finite element simulations; Multilayer structures; Surface acoustic waves; Temperature coefficient of frequencies; Temperature stable, Acoustic waves
Depositing User: Ms Sharifah Fahimah Saiyed Yeop
Date Deposited: 19 Aug 2021 06:09
Last Modified: 19 Aug 2021 06:09
URI: http://scholars.utp.edu.my/id/eprint/23194

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