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FEM analysis of sezawa mode SAW sensor for VOC based on CMOS compatible AlN/SiO2/Si multilayer structure

Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Malik, A.F. and Iqbal, A. (2018) FEM analysis of sezawa mode SAW sensor for VOC based on CMOS compatible AlN/SiO2/Si multilayer structure. Sensors (Switzerland), 18 (6).

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Official URL: https://www.scopus.com/inward/record.uri?eid=2-s2....

Abstract

A Finite Element Method (FEM) simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO2 /Si Surface Acoustic Wave (SAW) sensor to low concentrations of Volatile Organic Compounds (VOCs), that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS) compatible AlN/SiO2 /Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO2 layers� thicknesses over phase velocities and electromechanical coupling coefficients (k2) of two SAW modes (i.e., Rayleigh and Sezawa) is analyzed and the optimal thicknesses of AlN and SiO2 layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB) polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode. © 2018 by the authors. Licensee MDPI, Basel, Switzerland.

Item Type:Article
Impact Factor:cited By 0
Uncontrolled Keywords:Acoustic surface wave devices; Acoustic waves; Aluminum nitride; CMOS integrated circuits; Electromechanical coupling; Finite element method; III-V semiconductors; Metals; MOS devices; Multilayers; Oxide semiconductors; Polymer films; Semiconducting films; Silica; Volatile organic compounds; Wide band gap semiconductors, Complimentary metal oxide semiconductors; Electromechanical coupling coefficients; FEM simulations; Finite element method simulation; Multilayer structures; Propagation characteristics; Sezawa modes; Surface acoustic wave sensors, Selenium compounds
ID Code:21520
Deposited By: Ahmad Suhairi
Deposited On:01 Aug 2018 03:14
Last Modified:01 Aug 2018 03:14

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