Vertical Ge photodetector base on InP taper waveguide

Amiri, I.S. and Ariannejad, M.M. and Azzuhri, S.R.B. and Anwar, T. and Kouhdaragh, V. and Yupapin, P. (2018) Vertical Ge photodetector base on InP taper waveguide. Results in Physics, 9 . pp. 576-579.

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In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. © 2018 The Authors

Item Type:Article
Impact Factor:cited By 1
ID Code:20900
Deposited By: Ahmad Suhairi
Deposited On:26 Feb 2019 02:42
Last Modified:26 Feb 2019 02:42

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